(#6309291003) Intern, DRAM Process Integration Engineer
What You’ll Learn
- Project Overview: Advanced process / process integration for future DRAM
- Skills You’ll Learn:
- Compute DRAM cell feasibility evaluation
- Industry R&D perspectives for memory devices
What You’ll Do
Join Samsung Semiconductor's DRAM Path Finding Team! As an intern, you will explore process module development and full process integration for future DRAM. Dive into technology requirements, design rule, structural and electrical specifications. All while engaging in technical interactions with internal customers.
Location: Onsite at our San Jose headquarters 5 days a week
Reports to: Senior Director, DRAM Path Finding Team
- Survey DRAM process technologies
- Find technical barriers for future DRAM and propose vectors to explore with team members
- Validate DRAM cell structural feasibility using simulation tool
- Collaborate with team members for future DRAM design
- Complete other responsibilities as assigned.
What You Bring
- Graduate student pursuing PhD program in Electrical engineering or Physics or Material engineering.
- Must have at least 1 academic quarter/semester remaining
- Good knowledge of semiconductor / memory device physics / unit process engineering
- Good knowledge of VLSI circuits and systems
- You’re inclusive, adapting your style to the situation and diverse global norms of our people.
- An avid learner, you approach challenges with curiosity and resilience, seeking data to help build understanding.
- You’re collaborative, building relationships, humbly offering support and openly welcoming approaches.
- Innovative and creative, you proactively explore new ideas and adapt quickly to change.